Home

Products

Integrated Circuits (ICs)

Memory

Memory

MT47H32M16NF-25E:H TR

Banner
productimage

MT47H32M16NF-25E:H TR

IC DRAM 512MBIT PARALLEL 84FBGA

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. MT47H32M16NF-25E-H-TR is a 512Mbit DDR2 SDRAM device featuring a parallel memory interface. This component operates at a clock frequency of 400 MHz with an access time of 400 ps. The memory organization is 32M x 16, providing a substantial capacity for data storage. Designed for surface mount applications, it utilizes an 84-FBGA (8x12.5) package and is supplied on tape and reel for automated assembly. The operating voltage ranges from 1.7V to 1.9V, and it supports a write cycle time of 15ns. This AEC-Q100 qualified component is suitable for demanding automotive applications, offering volatile memory solutions.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 2 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case84-TFBGA
Mounting TypeSurface Mount
Memory Size512Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 85°C (TC)
Voltage - Supply1.7V ~ 1.9V
TechnologySDRAM - DDR2
Clock Frequency400 MHz
Memory FormatDRAM
Supplier Device Package84-FBGA (8x12.5)
GradeAutomotive
Write Cycle Time - Word, Page15ns
Memory InterfaceParallel
Access Time400 ps
Memory Organization32M x 16
ProgrammableNot Verified
QualificationAEC-Q100

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
MT46V32M16BN-5B:C

IC DRAM 512MBIT PARALLEL 60FBGA

product image
MT53E768M32D4DE-046 AAT:E

IC DRAM 24GBIT 200TFBGA

product image
MTFC256GASAONS-AIT

IC FLASH 2TBIT UFS2.1 153TFBGA