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MT47H32M16HW-25E AAT:G TR

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MT47H32M16HW-25E AAT:G TR

IC DRAM 512MBIT PARALLEL 84FBGA

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. DDR2 SDRAM device, MT47H32M16HW-25E-AAT-G-TR, offers 512Mbit of volatile memory organized as 32M x 16. This component operates at a clock frequency of 400 MHz with an access time of 400 ps. Featuring a parallel memory interface and a 1.7V to 1.9V supply voltage, it utilizes 15ns word/page write cycle times. The device is housed in an 84-FBGA (8x12.5) package, suitable for surface mounting and provided in tape and reel packaging. Qualified to AEC-Q100 standards and operating within an automotive temperature range of -40°C to 105°C (TC), this SDRAM is designed for demanding applications in the automotive sector.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case84-TFBGA
Mounting TypeSurface Mount
Memory Size512Mbit
Memory TypeVolatile
Operating Temperature-40°C ~ 105°C (TC)
Voltage - Supply1.7V ~ 1.9V
TechnologySDRAM - DDR2
Clock Frequency400 MHz
Memory FormatDRAM
Supplier Device Package84-FBGA (8x12.5)
GradeAutomotive
Write Cycle Time - Word, Page15ns
Memory InterfaceParallel
Access Time400 ps
Memory Organization32M x 16
ProgrammableNot Verified
QualificationAEC-Q100

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