MT47H256M8THN-25E:M
IC DRAM 2GBIT PARALLEL 63FBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT47H256M8THN-25E-M is a 2Gbit DDR2 SDRAM memory component. This surface mount device features a parallel memory interface with a 256M x 8 organization, delivering high-speed data access. Operating at a clock frequency of 400 MHz, it offers an access time of 400 ps. The component supports a supply voltage range of 1.7V to 1.9V and has a write cycle time of 15ns. Packaged in a 63-FBGA (8x10) configuration, it is suitable for applications requiring dense, high-performance memory solutions across various industries including telecommunications, computing, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 63-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SDRAM - DDR2 |
| Clock Frequency | 400 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 63-FBGA (8x10) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 400 ps |
| Memory Organization | 256M x 8 |
| Programmable | Not Verified |