MT47H256M8EB-25E XIT:C
IC DRAM 2GBIT PARALLEL 60FBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT47H256M8EB-25E-XIT-C is a 2Gbit DDR2 SDRAM device featuring a parallel memory interface. This component operates at a clock frequency of 400 MHz with an access time of 400 ps. The memory organization is 256M x 8, utilizing a volatile DRAM memory type. The device is housed in a 60-FBGA (9x11.5) surface mount package. Key specifications include a supply voltage range of 1.7V to 1.9V and a write cycle time of 15ns for word/page operations. This SDRAM is suitable for applications in networking, consumer electronics, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 60-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SDRAM - DDR2 |
| Clock Frequency | 400 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 60-FBGA (9x11.5) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 400 ps |
| Memory Organization | 256M x 8 |
| Programmable | Not Verified |
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