MT47H256M8EB-187E:C TR
IC DRAM 2GBIT PAR 60FBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. presents the MT47H256M8EB-187E-C-TR, a 2Gbit DDR2 SDRAM device. This component offers a parallel memory interface with a clock frequency of 533 MHz and an access time of 350 ps. Its organization is 256 Meg x 8, providing a substantial memory capacity. The device operates within a voltage range of 1.7V to 1.9V. Packaged in a 60-FBGA (9x11.5) format, it is supplied on tape and reel for automated assembly. This memory solution is suitable for applications requiring high-bandwidth data storage and retrieval across various industrial sectors. The write cycle time for word and page operations is 15ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 60-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SDRAM - DDR2 |
| Clock Frequency | 533 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 60-FBGA (9x11.5) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 350 ps |
| Memory Organization | 256M x 8 |
| Programmable | Not Verified |
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