MT47H256M4CF-25E:H
IC DRAM 1GBIT PARALLEL 60FBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc.'s MT47H256M4CF-25E-H is a 1Gbit DDR2 SDRAM device designed for high-performance memory applications. This surface-mount component utilizes a parallel memory interface and features a clock frequency of 400 MHz with an access time of 400 ps. The memory organization is 256M x 4, providing efficient data handling. Operating within a voltage range of 1.7V to 1.9V, this volatile memory component has a write cycle time of 15ns. The device is housed in a 60-FBGA (8x10) package, suitable for demanding environments. It finds application in various industries including consumer electronics, industrial automation, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 60-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SDRAM - DDR2 |
| Clock Frequency | 400 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 60-FBGA (8x10) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 400 ps |
| Memory Organization | 256M x 4 |
| Programmable | Not Verified |
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