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MT47H128M8SH-187E:M

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MT47H128M8SH-187E:M

IC DRAM 1GBIT PAR 60FBGA

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. MT47H128M8SH-187E-M is a 1Gbit DDR2 SDRAM device featuring a parallel memory interface. This high-speed memory component operates at a clock frequency of 533 MHz, offering an access time of 350 ps. The memory organization is 128M x 8, providing a substantial capacity for demanding applications. It utilizes a 60-TFBGA package for surface mounting, with a supply voltage range of 1.7V to 1.9V. The write cycle time for word/page operations is 15ns. This memory solution is commonly employed in computing, networking, and industrial automation systems where high-bandwidth data storage and retrieval are critical.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case60-TFBGA
Mounting TypeSurface Mount
Memory Size1Gbit
Memory TypeVolatile
Operating Temperature0°C ~ 85°C (TC)
Voltage - Supply1.7V ~ 1.9V
TechnologySDRAM - DDR2
Clock Frequency533 MHz
Memory FormatDRAM
Supplier Device Package60-FBGA (8x10)
Write Cycle Time - Word, Page15ns
Memory InterfaceParallel
Access Time350 ps
Memory Organization128M x 8
ProgrammableNot Verified

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