MT47H128M4SH-25E:H
IC DRAM 512MBIT PARALLEL 60FBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT47H128M4SH-25E-H is a 512Mbit DDR2 SDRAM device featuring a parallel memory interface. This component operates at a clock frequency of 400 MHz with an access time of 400 ps. The memory organization is 128M x 4, providing a total density of 512Mbit. The device utilizes a 1.7V to 1.9V supply voltage and has a write cycle time of 15ns. Packaged in a 60-FBGA (8x10) format for surface mounting, it is suitable for applications requiring high-speed volatile memory. This component finds application in various industrial sectors, including telecommunications, consumer electronics, and computing systems. Operating temperature range is 0°C to 85°C (TC).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 60-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SDRAM - DDR2 |
| Clock Frequency | 400 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 60-FBGA (8x10) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 400 ps |
| Memory Organization | 128M x 4 |
| Programmable | Not Verified |