MT41K512M8V80AWC1
IC DRAM 4GBIT PARALLEL DIEManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT41K512M8V80AWC1 is a 4Gbit DDR3L SDRAM memory component. This parallel die features a memory organization of 512M x 8, delivering high-density storage for demanding applications. Operating within a voltage range of 1.283V to 1.45V, it is designed for efficient power consumption. The component is specified for operation across a temperature range of 0°C to 95°C (TC). This memory solution is suitable for use in various industries including computing, networking, and consumer electronics where robust and high-performance volatile memory is critical. The device is supplied in Bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | - |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Voltage - Supply | 1.283V ~ 1.45V |
| Technology | SDRAM - DDR3L |
| Memory Format | DRAM |
| Supplier Device Package | Die |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
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