MT41K512M8V00HWC1
IC DRAM 4GBIT PARALLEL DIEManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT41K512M8V00HWC1 is a high-density DDR3L SDRAM component. This volatile memory device features a 4Gbit parallel die organization, specifically configured as 512M x 8. Designed for applications requiring substantial data storage and rapid access, this component operates within a supply voltage range of 1.283V to 1.45V. The MT41K512M8V00HWC1 is suitable for operation across an industrial temperature range of 0°C to 95°C (TC). The component is supplied in a bulk die package. This memory solution is commonly utilized in demanding sectors such as telecommunications, networking infrastructure, and high-performance computing.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 2 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | - |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Voltage - Supply | 1.283V ~ 1.45V |
| Technology | SDRAM - DDR3L |
| Memory Format | DRAM |
| Supplier Device Package | Die |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
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