Home

Products

Integrated Circuits (ICs)

Memory

Memory

MT41K512M8RH-107:E

Banner
productimage

MT41K512M8RH-107:E

IC DRAM 4GBIT PAR 78FBGA

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. MT41K512M8RH-107-E is a 4Gbit DDR3L SDRAM device featuring a parallel memory interface. This component operates at a clock frequency of 933 MHz with an access time of 20 ns. The memory organization is 512M x 8, providing a substantial capacity for high-performance applications. Designed for surface mount installation, it utilizes a 78-TFBGA package with dimensions of 9x10.5 mm. The operating voltage range is 1.283V to 1.45V, and it is specified for operation within a junction temperature range of 0°C to 95°C. This memory solution is suitable for demanding applications in the computing, networking, and industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / Case78-TFBGA
Mounting TypeSurface Mount
Memory Size4Gbit
Memory TypeVolatile
Operating Temperature0°C ~ 95°C (TC)
Voltage - Supply1.283V ~ 1.45V
TechnologySDRAM - DDR3L
Clock Frequency933 MHz
Memory FormatDRAM
Supplier Device Package78-FBGA (9x10.5)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Access Time20 ns
Memory Organization512M x 8
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
NAND08GW3D2AN6E

IC FLASH 8GBIT PARALLEL 48TSOP

product image
MT46V32M16BN-5B:C

IC DRAM 512MBIT PARALLEL 60FBGA

product image
MT53E768M32D4DE-046 AAT:E

IC DRAM 24GBIT 200TFBGA