MT40A1G8SA-062E AUT:E
IC DRAM 8GBIT PARALLEL 78FBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT40A1G8SA-062E-AUT-E is an 8Gbit DDR4 SDRAM component offering high-speed parallel memory access. This device operates at a 1.6 GHz clock frequency with a 19 ns access time, designed for demanding applications requiring robust performance and reliability. The memory organization is 1G x 8, utilizing advanced SDRAM technology.
The component is housed in a 78-FBGA (7.5x11) package suitable for surface mount applications. Its automotive grade qualification (AEC-Q100) and operating temperature range of -40°C to 125°C (TC) ensure suitability for stringent automotive environments. This Micron Technology Inc. memory IC is frequently integrated into automotive infotainment systems, advanced driver-assistance systems (ADAS), and other high-performance automotive electronics where data integrity and speed are paramount. The voltage supply range is 1.14V to 1.26V, with a write cycle time of 15ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 78-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 125°C (TC) |
| Voltage - Supply | 1.14V ~ 1.26V |
| Technology | SDRAM - DDR4 |
| Clock Frequency | 1.6 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 78-FBGA (7.5x11) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 19 ns |
| Memory Organization | 1G x 8 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
MT53E768M32D4DE-046 AAT:E
IC DRAM 24GBIT 200TFBGA
