MT29RZ4C8DZZMHAN-18W.80Y TR
IC FLASH RAM 4GBIT PAR 533MHZManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29RZ4C8DZZMHAN-18W-80Y-TR is a high-density memory component combining 4 Gigabit NAND Flash and 4 Gigabit LPDDR2 DRAM. This device operates with a 533 MHz clock frequency, utilizing a parallel interface for both memory types. The NAND Flash is organized as 256M x 16 bits, while the LPDDR2 DRAM is configured as 128M x 32 bits. This advanced architecture is suitable for demanding embedded applications in sectors such as automotive, networking, and industrial automation. The component is supplied on tape and reel and operates within an ambient temperature range of -25°C to 85°C, with a supply voltage of 1.8V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | - |
| Mounting Type | - |
| Memory Size | 4Gbit (NAND), 4Gbit (LPDDR2) |
| Memory Type | Non-Volatile, Volatile |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Voltage - Supply | 1.8V |
| Technology | FLASH - NAND, DRAM - LPDDR2 |
| Clock Frequency | 533 MHz |
| Memory Format | FLASH, RAM |
| Supplier Device Package | - |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 256M x 16 (NAND), 128M x 32 (LPDDR2) |
| Programmable | Not Verified |
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