MT29RZ4B2DZZHGSK-18 W.80E TR
IC FLASH RAM 4GBIT PAR 162VFBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29RZ4B2DZZHGSK-18-W-80E-TR is a multi-chip package combining 4Gbit NAND Flash and 2Gbit LPDDR2 DRAM. This device features a parallel interface with a clock frequency of 533 MHz for the LPDDR2 component. The NAND Flash memory organization is 512M x 8, while the LPDDR2 is 64M x 32. The component is housed in a 162-VFBGA package with dimensions of 11.5x13 mm and is designed for surface mounting. It operates within an ambient temperature range of -25°C to 85°C and requires a 1.8V supply voltage. This solution is suitable for applications in consumer electronics, mobile devices, and embedded systems demanding high-density, high-performance memory.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 162-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit (NAND), 2Gbit (LPDDR2) |
| Memory Type | Non-Volatile, Volatile |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Voltage - Supply | 1.8V |
| Technology | FLASH - NAND, DRAM - LPDDR2 |
| Clock Frequency | 533 MHz |
| Memory Format | FLASH, RAM |
| Supplier Device Package | 162-VFBGA (11.5x13) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 512M x 8 (NAND), 64M x 32 (LPDDR2) |
| Programmable | Not Verified |
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