MT29RZ4B2DZZHGSK-18 W.80E
IC FLASH RAM 4GBIT PAR 162VFBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29RZ4B2DZZHGSK-18-W-80E is a multi-chip package memory solution featuring 4Gbit NAND Flash and 2Gbit LPDDR2 DRAM. This device leverages a parallel interface for both memory types, with the NAND Flash operating at 533 MHz. The NAND Flash is organized as 512M x 8, and the LPDDR2 as 64M x 32. Designed for surface mount applications, it is housed in a 162-VFBGA package measuring 11.5x13 mm. The component operates with a supply voltage of 1.8V and is rated for an ambient temperature range of -25°C to 85°C. This memory configuration is suitable for applications in consumer electronics, mobile devices, and embedded systems requiring high-density, high-performance storage and volatile memory.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 162-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit (NAND), 2Gbit (LPDDR2) |
| Memory Type | Non-Volatile, Volatile |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Voltage - Supply | 1.8V |
| Technology | FLASH - NAND, DRAM - LPDDR2 |
| Clock Frequency | 533 MHz |
| Memory Format | FLASH, RAM |
| Supplier Device Package | 162-VFBGA (11.5x13) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 512M x 8 (NAND), 64M x 32 (LPDDR2) |
| Programmable | Not Verified |
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