MT29GZ6A6BPIET-046AIT.112
IC FLASH RAM 8GBIT ONFI 149WFBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. presents the MT29GZ6A6BPIET-046AIT-112, a high-density memory component combining 8Gbit of SLC NAND flash and 8Gbit of LPDDR4 DRAM. This device features an ONFI 2.1 interface supporting clock frequencies up to 2.133 GHz with a NAND access time of 25 ns. The dual-die configuration is housed in a compact 149-VFBGA (8x9.5) package, suitable for surface mounting. Operating across a temperature range of -40°C to 85°C (TA) and qualified to AEC-Q100 standards, this component is designed for demanding automotive applications. Supply voltages range from 1.06V to 1.17V for the DRAM and 1.7V to 1.95V for the NAND. NAND word and page write cycle times are 20ns and 30ns respectively.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | 149-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Gbit (NAND), 8Gbit (LPDDR4) |
| Memory Type | Non-Volatile, Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Technology | FLASH - NAND (SLC), DRAM - LPDDR4 |
| Clock Frequency | 2.133 GHz |
| Memory Format | FLASH, RAM |
| Supplier Device Package | 149-VFBGA (8x9.5) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 20ns, 30ns |
| Memory Interface | ONFI |
| Access Time | 25 ns |
| Memory Organization | 1G x 8 (NAND), 512M x 16 (LPDDR4) |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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