MT29F8G08ABABAM61A3WC1
IC FLASH 8GBIT PARALLEL DIEManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29F8G08ABABAM61A3WC1 is a high-performance NAND Flash memory device. This non-volatile memory component features an 8Gbit capacity organized as 1G x 8 bits, accessed via a parallel interface. Engineered for demanding applications, it utilizes advanced FLASH - NAND technology. The device is supplied in a Die package, suitable for surface mount applications, and operates across a voltage range of 2.7V to 3.6V. Its robust design is suitable for use in various industries including automotive, industrial, and consumer electronics where reliable data storage is critical. The operating temperature range for this component is 0°C to 70°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Memory Size | 8Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | Die |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 1G x 8 |
| Programmable | Not Verified |
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