MT29F512G08EMCBBJ5-10ES:B TR
IC FLASH 512GBIT PAR 132TBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29F512G08EMCBBJ5-10ES-B-TR is a 512Gbit NAND Flash memory device utilizing Triple-Level Cell (TLC) technology. This non-volatile memory component features a parallel interface operating at up to 100 MHz, with an organization of 64G x 8. The device is housed in a 132-TBGA (12x18) package suitable for surface mounting, provided on tape and reel. Designed for reliable operation within an ambient temperature range of 0°C to 70°C, it requires a supply voltage between 2.7V and 3.6V. This memory solution is well-suited for applications in consumer electronics and data storage systems demanding high-density, cost-effective flash storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | - |
| Mounting Type | Surface Mount |
| Memory Size | 512Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND (TLC) |
| Clock Frequency | 100 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 132-TBGA (12x18) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 64G x 8 |
| Programmable | Not Verified |
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