MT29F512G08EEHAFJ4-3R:A
IC FLASH 512GBIT PAR 132VBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29F512G08EEHAFJ4-3R-A is a 512Gbit NAND Flash memory device utilizing Triple-Level Cell (TLC) technology. This component features a parallel interface and operates at a clock frequency of 333 MHz. The memory organization is 64G x 8, providing ample capacity for demanding storage applications. Its 132-VBGA (12x18) package facilitates surface mounting. Designed for a voltage range of 2.5V to 3.6V, this non-volatile memory is suitable for operation within a temperature range of 0°C to 70°C (TA). It is commonly employed in consumer electronics, data storage, and telecommunications systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 132-VBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.5V ~ 3.6V |
| Technology | FLASH - NAND (TLC) |
| Clock Frequency | 333 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 132-VBGA (12x18) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 64G x 8 |
| Programmable | Not Verified |
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