MT29F512G08EECAGJ4-5M:A TR
IC FLASH 512GBIT PAR 132VBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc.'s MT29F512G08EECAGJ4-5M-A-TR is a high-density NAND flash memory device offering 512 Gigabits of storage. This component features a parallel interface and is housed in a 132-ball VFBGA package, ensuring robust connectivity for demanding applications. Designed for superior performance and reliability, it supports advanced error correction and wear leveling algorithms. Applications for this advanced memory solution span data centers, enterprise storage systems, and high-performance computing environments where data integrity and speed are paramount. The device's architecture is optimized for efficient read and write operations, making it suitable for solid-state drives (SSDs) and other high-capacity storage solutions.
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Series: RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: TrayDownload Free CAD Model:
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