MT29F512G08EBLEEJ4-T:E TR
IC FLASH 512GBIT PAR 132VBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29F512G08EBLEEJ4-T-E-TR is a 512Gbit non-volatile NAND FLASH memory integrated circuit. This component utilizes Triple-Level Cell (TLC) technology and presents a parallel interface. The memory is organized as 64 Gigax 8 bits. Packaged in a 132-VBGA (12x18) surface mount configuration, it operates within a supply voltage range of 2.6V to 3.6V and an ambient temperature range of 0°C to 70°C. The MT29F512G08EBLEEJ4-T-E-TR is suitable for applications in consumer electronics, networking, and industrial systems requiring high-density data storage. This device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 132-VBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C |
| Voltage - Supply | 2.6V ~ 3.6V |
| Technology | FLASH - NAND (TLC) |
| Memory Format | FLASH |
| Supplier Device Package | 132-VBGA (12x18) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 64G x 8 |
| Programmable | Not Verified |
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