MT29F512G08EBLEEJ4-R:E
IC FLASH 512GBIT PAR 132VBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc.'s MT29F512G08EBLEEJ4-R-E is a 512Gbit NAND Flash memory integrated circuit utilizing Triple-Level Cell (TLC) technology. This non-volatile memory component features a parallel interface and is organized as 64G x 8. Supplied in a 132-VBGA (12x18) package, it supports surface mount installation and operates within a voltage range of 2.6V to 3.6V. The operating temperature range is from 0°C to 70°C. This device is well-suited for applications requiring high-density data storage, including consumer electronics, automotive systems, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | 132-VBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C |
| Voltage - Supply | 2.6V ~ 3.6V |
| Technology | FLASH - NAND (TLC) |
| Memory Format | FLASH |
| Supplier Device Package | 132-VBGA (12x18) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 64G x 8 |
| Programmable | Not Verified |
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