MT29F512G08EBLEEJ4-M:E
IC FLASH 512GBIT PAR 132VBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc.'s MT29F512G08EBLEEJ4-M-E is a high-density NAND Flash memory component with a 512Gbit capacity. This device is organized as 64G x 8, providing ample storage for demanding applications. It features a 132-ball VBGA package, ensuring robust connectivity and thermal performance. Designed for reliability and speed, this memory solution is suitable for applications in the automotive, industrial, and consumer electronics sectors where high-capacity, non-volatile storage is critical. The component leverages advanced NAND Flash technology to deliver consistent performance and endurance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Memory Size | 512Gbit |
| Memory Format | FLASH |
| Memory Organization | 64G x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT53D768M64D8NZ-046 WT ES:E
IC DRAM 48GBIT 2.133GHZ 376WFBGA
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
