MT29F512G08EBHBFJ4-T:B
IC FLASH 512GBIT PAR 132VBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT29F512G08EBHBFJ4-T-B is a 512Gbit NAND Flash memory device featuring a parallel interface. This non-volatile memory is organized as 64G x 8 and utilizes Triple-Level Cell (TLC) technology. The component is supplied in a 132-VBGA (12x18) surface-mount package and operates within a supply voltage range of 2.5V to 3.6V. Its operating temperature is rated from 0°C to 70°C (TA). This memory solution is suitable for applications in consumer electronics, industrial systems, and networking infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 132-VBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.5V ~ 3.6V |
| Technology | FLASH - NAND (TLC) |
| Memory Format | FLASH |
| Supplier Device Package | 132-VBGA (12x18) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 64G x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
EDF8164A3PF-JD-F-R TR
IC DRAM 8GBIT PARALLEL 933MHZ
MT49H16M18CSJ-25 IT:B
IC DRAM 288MBIT PARALLEL 144FBGA
