MT29F512G08EBHBFJ4-R:B TR
IC FLASH 512GBIT PAR 132VBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29F512G08EBHBFJ4-R-B-TR is a 512Gbit NAND Flash memory integrated circuit. This non-volatile memory component features a parallel interface and a 64G x 8 organization, utilizing Triple-Level Cell (TLC) technology. The device is housed in a 132-VBGA (12x18) package and is designed for surface mounting. Operating within a temperature range of 0°C to 70°C, it supports supply voltages from 2.5V to 3.6V. This component is commonly found in applications such as solid-state drives (SSDs), embedded systems, and consumer electronics. The MT29F512G08EBHBFJ4-R-B-TR is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 132-VBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.5V ~ 3.6V |
| Technology | FLASH - NAND (TLC) |
| Memory Format | FLASH |
| Supplier Device Package | 132-VBGA (12x18) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 64G x 8 |
| Programmable | Not Verified |
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