MT29F512G08EBHBFJ4-R:B
IC FLASH 512GBIT PAR 132VBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29F512G08EBHBFJ4-R-B is a 512Gbit NAND Flash memory device featuring a parallel interface. This non-volatile memory component is organized as 64G x 8 and is housed in a 132-VBGA (12x18) package, suitable for surface mount applications. The device operates with a supply voltage range of 2.5V to 3.6V and has an operating temperature range of 0°C to 70°C. Its TLC (Triple-Level Cell) technology makes it a suitable choice for demanding applications in consumer electronics, networking, and industrial automation where high-density, reliable flash storage is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 132-VBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.5V ~ 3.6V |
| Technology | FLASH - NAND (TLC) |
| Memory Format | FLASH |
| Supplier Device Package | 132-VBGA (12x18) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 64G x 8 |
| Programmable | Not Verified |
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