MT29F512G08EBHAFJ4-3ITFES:A TR
IC FLASH 512GBIT PAR 132VBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29F512G08EBHAFJ4-3ITFES-A-TR is a 512Gbit Non-Volatile NAND Flash memory device with a parallel interface. Featuring Triple-Level Cell (TLC) technology, this component operates at a clock frequency of 333 MHz and is organized as 64G x 8. The device is housed in a 132-VBGA (12x18) package, suitable for surface mount applications. It operates within a voltage supply range of 2.5V to 3.6V and has an operating temperature range of -40°C to 85°C. This memory solution is designed for applications requiring high-density storage, commonly found in consumer electronics, networking equipment, and industrial automation systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 132-VBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.5V ~ 3.6V |
| Technology | FLASH - NAND (TLC) |
| Clock Frequency | 333 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 132-VBGA (12x18) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 64G x 8 |
| Programmable | Not Verified |
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