Micron Technology Inc. presents the MT29F512G08EBHAFJ4-3ITFES-A, a 512 Gbit NAND Flash memory component. This device features a parallel interface and is housed in a 132-ball VBGA package. Optimized for high-density storage applications, it offers robust performance and reliability. The MT29F512G08EBHAFJ4-3ITFES-A is suitable for demanding applications across various industries, including enterprise storage, embedded systems, and networking infrastructure. Its advanced architecture ensures efficient data management and long-term endurance. This component is supplied in trays.
Additional Information
Series:RoHS Status:Manufacturer Lead Time:Product Status: ActivePackaging: Tray