MT29F512G08EBHAFB17A3WC1-R
IC FLASH 512GBIT PARALLEL DIEManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29F512G08EBHAFB17A3WC1-R is a 512Gbit NAND Flash memory component with a parallel interface. This non-volatile memory utilizes Triple-Level Cell (TLC) technology organized as 64G x 8. Designed for surface mount applications and supplied in bulk die form, it operates within a voltage range of 2.5V to 3.6V and an ambient temperature range of 0°C to 70°C. This component is suitable for various industrial applications including data storage, networking equipment, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Memory Size | 512Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C |
| Voltage - Supply | 2.5V ~ 3.6V |
| Technology | FLASH - NAND (TLC) |
| Memory Format | FLASH |
| Supplier Device Package | Die |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 64G x 8 |
| Programmable | Not Verified |
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