MT29F512G08EBHAFB17A3WC1-FES
IC FLASH 512GBIT PARALLEL DIEManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29F512G08EBHAFB17A3WC1-FES is a 512Gbit NAND Flash memory device organized as 64G x 8. This parallel interface memory utilizes TLC technology and is supplied in a bulk die package for surface mounting. Operating across a voltage range of 2.5V to 3.6V, this non-volatile memory component is suitable for demanding applications in sectors such as automotive, industrial, and networking. Its robust design and substantial capacity make it an ideal choice for high-density storage solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Memory Size | 512Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C |
| Voltage - Supply | 2.5V ~ 3.6V |
| Technology | FLASH - NAND (TLC) |
| Memory Format | FLASH |
| Supplier Device Package | Die |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 64G x 8 |
| Programmable | Not Verified |
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