Micron Technology Inc. presents the MT29F512G08EBHAFB17A3WC1-F, a 512Gb NAND Flash memory die. This component, organized as 64G x 8, utilizes advanced TLC (Triple-Level Cell) technology for high-density data storage. Designed for demanding applications, it offers robust performance and reliability. The MT29F512G08EBHAFB17A3WC1-F is suitable for use in data centers, automotive systems, industrial automation, and consumer electronics where high-capacity, non-volatile storage is critical. This die is provided in tray packaging.
Additional Information
Series:RoHS Status:Manufacturer Lead Time:Product Status: ActivePackaging: Tray