MT29F512G08CKCBBH7-6C:B
IC FLASH 512GBIT PAR 152TBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT29F512G08CKCBBH7-6C-B is a 512 Gbit NAND Flash memory component. This device features a parallel interface and is housed in a 152-ball TBGA package, suitable for high-density storage applications. Its architecture is designed for robust data retention and high read/write performance, making it a critical element in advanced memory systems. The MT29F512G08CKCBBH7-6C-B is utilized across various demanding industries, including data centers, enterprise storage solutions, and high-performance consumer electronics where reliable and capacious memory is paramount. This component is delivered in tray packaging for efficient integration into manufacturing processes.
Additional Information
Series: RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT53D768M64D8NZ-046 WT ES:E
IC DRAM 48GBIT 2.133GHZ 376WFBGA
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
