MT29F512G08CFCBBWP-10ES:B TR
IC FLASH 512GBIT PAR 48TSOP IManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29F512G08CFCBBWP-10ES-B-TR is a 512Gbit NAND Flash memory device. This non-volatile memory utilizes a parallel interface and operates at a clock frequency of 100 MHz. The memory organization is 64G x 8, employing Multi-Level Cell (MLC) technology for data storage. This component is designed for surface mount applications, housed in a 48-TSOP I package. Its operating temperature range is 0°C to 70°C, with a supply voltage requirement of 2.7V to 3.6V. The MT29F512G08CFCBBWP-10ES-B-TR is suitable for use in various industrial and consumer electronics applications requiring high-density non-volatile storage. The device is supplied on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 512Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND (MLC) |
| Clock Frequency | 100 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 48-TSOP I |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 64G x 8 |
| Programmable | Not Verified |
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