MT29F4T08EULEEM4-R:E
IC FLASH 4TBIT LBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT29F4T08EULEEM4-R-E is a 4Tbit NAND Flash memory device featuring Triple-Level Cell (TLC) technology. This non-volatile memory utilizes a parallel interface for data access and is organized as 512 Gigabytes x 8. The component is housed in a 132-lead Ball Grid Array (LBGA) package with dimensions of 12x18 mm, suitable for surface mount applications. Operating within a voltage range of 2.6V to 3.6V and an ambient temperature range of 0°C to 70°C, this memory solution is designed for high-density storage requirements in applications such as consumer electronics, industrial systems, and data storage.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | 132-BGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Tbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C |
| Voltage - Supply | 2.6V ~ 3.6V |
| Technology | FLASH - NAND (TLC) |
| Memory Format | FLASH |
| Supplier Device Package | 132-LBGA (12x18) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 512G x 8 |
| Programmable | Not Verified |
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