MT29F4T08EULCEM4-R:C
IC FLASH 4TBIT PARALLELManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT29F4T08EULCEM4-R-C is a 4Tbit NAND Flash memory device featuring a parallel interface. This non-volatile memory utilizes Triple-Level Cell (TLC) technology for high-density data storage. The memory organization is 512 Gig x 8 bits, providing efficient data access. Operating within a voltage range of 2.7V to 3.6V, this component is suitable for applications requiring robust storage solutions. Its operating temperature range is 0°C to 70°C (TA). This device is commonly found in consumer electronics and data storage systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | - |
| Mounting Type | - |
| Memory Size | 4Tbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND (TLC) |
| Memory Format | FLASH |
| Supplier Device Package | - |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 512G x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT53D768M64D8NZ-046 WT ES:E
IC DRAM 48GBIT 2.133GHZ 376WFBGA
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
