MT29F4T08EUHBFM4-T:B TR
IC FLASH 4TBIT PARALLELManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT29F4T08EUHBFM4-T-B-TR is a high-density 4Tbit NAND Flash memory device with a parallel interface. This Non-Volatile memory utilizes Triple-Level Cell (TLC) technology for efficient data storage. The device is organized as 512G x 8 and operates within a voltage range of 1.7V to 1.95V. Supplied in Tape & Reel packaging, this component is suitable for demanding applications across various industries, including data storage, networking, and consumer electronics where high-capacity, parallel access flash memory is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | - |
| Mounting Type | - |
| Memory Size | 4Tbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (TLC) |
| Memory Format | FLASH |
| Supplier Device Package | - |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 512G x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
MT54W2MH8JF-4
IC SRAM 18MBIT HSTL 165FBGA
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
EDF8164A3PF-JD-F-R TR
IC DRAM 8GBIT PARALLEL 933MHZ
