MT29F4T08EUHBFM4-T:B
IC FLASH 4TBIT PARALLELManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29F4T08EUHBFM4-T-B is a 4 Terabit (Tbit) NAND Flash memory device featuring a parallel interface. This non-volatile memory component utilizes Triple-Level Cell (TLC) technology for high-density storage. The memory organization is 512 Gigabytes (Gbit) x 8, providing a robust solution for data storage applications. Operating within a voltage range of 1.7V to 1.95V, it is suitable for demanding environments with an operating temperature of 0°C to 70°C (TA). This component is commonly employed in consumer electronics, data centers, and solid-state drives (SSDs).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | - |
| Mounting Type | - |
| Memory Size | 4Tbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (TLC) |
| Memory Format | FLASH |
| Supplier Device Package | - |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 512G x 8 |
| Programmable | Not Verified |
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