MT29F4G16ABADAM60A3WC1
IC FLASH 4GBIT PARALLEL DIEManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT29F4G16ABADAM60A3WC1 is a 4Gbit NAND Flash memory component featuring a parallel interface. This non-volatile memory is organized as 256M x 16 bits, suitable for demanding storage applications. The device utilizes surface mount technology for integration. Operating within a voltage range of 2.7V to 3.6V, it is designed for industrial environments with an operating temperature range of 0°C to 70°C. This component is commonly found in consumer electronics, telecommunications equipment, and automotive systems requiring reliable data storage. The 4Gbit capacity and parallel interface make it a robust choice for high-density storage solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | Die |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 256M x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT53D768M64D8NZ-046 WT ES:E
IC DRAM 48GBIT 2.133GHZ 376WFBGA
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
