MT29F4G08BABWP-ET
IC FLASH 4GBIT PARALLEL 48TSOP IManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT29F4G08BABWP-ET is a 4Gbit NAND Flash memory device featuring a parallel interface. Organized as 512M x 8 bits, this non-volatile memory offers robust data storage capabilities. The device is supplied in a 48-TSOP I surface-mount package, designed for standard manufacturing processes. Operating across a voltage range of 2.7V to 3.6V, the MT29F4G08BABWP-ET is suitable for applications requiring reliable data retention and read/write performance within an industrial temperature range of -40°C to 85°C. This component finds application in various sectors, including consumer electronics, industrial automation, and embedded systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 48-TSOP I |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT53D768M64D8NZ-046 WT ES:E
IC DRAM 48GBIT 2.133GHZ 376WFBGA
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
