MT29F4G08ABAEAM70M3WC1
IC FLASH 4GBIT PARALLEL DIEManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29F4G08ABAEAM70M3WC1 is a 4Gbit NAND Flash memory die designed for high-performance applications. This non-volatile memory features a parallel interface and an organization of 512M x 8 bits. Operating within a voltage range of 2.7V to 3.6V, it offers robust data storage capabilities. The MT29F4G08ABAEAM70M3WC1 is suitable for demanding environments, with an operating temperature range of 0°C to 70°C (TA). Its surface mount die package is ideal for compact designs in industrial, automotive, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | Die |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
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