Home

Products

Integrated Circuits (ICs)

Memory

Memory

MT29F4G08ABAEAH4-IT:E

Banner
productimage

MT29F4G08ABAEAH4-IT:E

IC FLASH 4GBIT PARALLEL 63VFBGA

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. MT29F4G08ABAEAH4-IT-E is a 4Gbit NAND Flash memory device utilizing a parallel interface. This non-volatile memory component is organized as 512M x 8 and is housed in a 63-VFBGA package, specifically a 9x11mm footprint for surface mounting. Operating within a voltage range of 2.7V to 3.6V, it is designed for industrial applications with an operating temperature range of -40°C to 85°C. The MT29F4G08ABAEAH4-IT-E is suitable for systems requiring high-density, high-performance data storage. Its robust construction and broad operating temperature make it a reliable choice for demanding environments within the automotive, industrial automation, and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case63-VFBGA
Mounting TypeSurface Mount
Memory Size4Gbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NAND
Memory FormatFLASH
Supplier Device Package63-VFBGA (9x11)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Memory Organization512M x 8
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
MT46V32M16BN-5B:C

IC DRAM 512MBIT PARALLEL 60FBGA

product image
MT53E768M32D4DE-046 AAT:E

IC DRAM 24GBIT 200TFBGA

product image
MTFC256GASAONS-AIT

IC FLASH 2TBIT UFS2.1 153TFBGA