MT29F3T08EUHBBM4-3R:B
IC FLASH 3TBIT PARALLEL 333MHZManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29F3T08EUHBBM4-3R-B is a 3 Terabit NAND Flash memory device with a parallel interface, operating at a clock frequency of 333 MHz. This non-volatile memory utilizes advanced FLASH NAND technology with an organization of 384 Gigabytes x 8. The device is designed for demanding applications across various industries, including automotive, industrial, and data center storage solutions. It operates within a voltage supply range of 2.5V to 3.6V and is specified for an operating temperature range of 0°C to 70°C (TA). This component is supplied in tray packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | - |
| Mounting Type | - |
| Memory Size | 3Tbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.5V ~ 3.6V |
| Technology | FLASH - NAND |
| Clock Frequency | 333 MHz |
| Memory Format | FLASH |
| Supplier Device Package | - |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 384G x 8 |
| Programmable | Not Verified |
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