Home

Products

Integrated Circuits (ICs)

Memory

Memory

MT29F2T08EMLEEJ4-R:E

Banner
productimage

MT29F2T08EMLEEJ4-R:E

IC FLASH 2TBIT VBGA

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. MT29F2T08EMLEEJ4-R-E is a 2Tbit NAND Flash memory device featuring Triple-Level Cell (TLC) technology. This non-volatile memory utilizes a parallel interface and is organized as 256G x 8. The component is housed in a 132-VBGA (12x18) package, suitable for surface mount applications. With an operating temperature range of 0°C to 70°C and a supply voltage of 2.6V to 3.6V, this memory is designed for demanding applications in areas such as consumer electronics, networking equipment, and industrial systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: Box
Technical Details:
PackagingBox
Package / Case132-VBGA
Mounting TypeSurface Mount
Memory Size2Tbit
Memory TypeNon-Volatile
Operating Temperature0°C ~ 70°C
Voltage - Supply2.6V ~ 3.6V
TechnologyFLASH - NAND (TLC)
Memory FormatFLASH
Supplier Device Package132-VBGA (12x18)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Memory Organization256G x 8
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
MT46V32M16BN-5B:C

IC DRAM 512MBIT PARALLEL 60FBGA

product image
MT53E768M32D4DE-046 AAT:E

IC DRAM 24GBIT 200TFBGA

product image
MTFC256GASAONS-AIT

IC FLASH 2TBIT UFS2.1 153TFBGA