MT29F2T08EMLEEJ4-M:E TR
IC FLASH 2TBIT VBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. presents the MT29F2T08EMLEEJ4-M-E-TR, a high-density 2Tbit NAND Flash memory component. This device utilizes a VBGA package for efficient board integration. With a memory organization of 256G x 8, it offers substantial storage capacity for demanding applications. The MT29F2T08EMLEEJ4-M-E-TR is designed for use in a wide array of industries including automotive, industrial, and consumer electronics where robust and high-capacity non-volatile memory is critical. Supplied in Tape & Reel packaging, this component is optimized for high-volume manufacturing processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Memory Size | 2Tbit |
| Memory Format | FLASH |
| Memory Organization | 256G x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT53D768M64D8NZ-046 WT ES:E
IC DRAM 48GBIT 2.133GHZ 376WFBGA
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
