MT29F2T08EMHBFJ4-T:B
IC FLASH 2TBIT PARALLEL 132VBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT29F2T08EMHBFJ4-T-B is a 2Tbit NAND Flash memory device with a parallel interface. This non-volatile memory utilizes Triple-Level Cell (TLC) technology and is presented in a 132-VBGA (12x18) package suitable for surface mounting. The internal organization is 256G x 8 bits, providing a substantial capacity for data storage. Operating within a temperature range of 0°C to 70°C, this component supports supply voltages from 1.7V to 1.95V. Applications for this memory device are prevalent in consumer electronics, data centers, and embedded systems where high-density, parallel flash storage is required.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 132-VBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Tbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (TLC) |
| Memory Format | FLASH |
| Supplier Device Package | 132-VBGA (12x18) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 256G x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
MT53E768M32D4DE-046 AAT:E
IC DRAM 24GBIT 200TFBGA
MTFC256GASAONS-AIT
IC FLASH 2TBIT UFS2.1 153TFBGA
