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MT29F2T08CUHBBM4-3R:B

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MT29F2T08CUHBBM4-3R:B

IC FLASH 2TBIT PARALLEL 333MHZ

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. MT29F2T08CUHBBM4-3R-B is a 2Tbit NAND Flash memory device featuring a parallel interface. This non-volatile memory component operates at a clock frequency of 333 MHz and is organized as 256G x 8. The device supports a supply voltage range of 2.5V to 3.6V and is suitable for operation within an ambient temperature range of 0°C to 70°C. Leveraging advanced FLASH - NAND technology, this memory solution is commonly deployed in high-performance applications across sectors such as data storage, networking, and industrial automation. The MT29F2T08CUHBBM4-3R-B is provided in Bulk packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case-
Mounting Type-
Memory Size2Tbit
Memory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply2.5V ~ 3.6V
TechnologyFLASH - NAND
Clock Frequency333 MHz
Memory FormatFLASH
Supplier Device Package-
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Memory Organization256G x 8
ProgrammableNot Verified

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