Home

Products

Integrated Circuits (ICs)

Memory

Memory

MT29F2G16ABBEAHC:E TR

Banner
productimage

MT29F2G16ABBEAHC:E TR

IC FLASH 2GBIT PARALLEL 63VFBGA

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. MT29F2G16ABBEAHC-E-TR is a 2 Gbit NAND Flash memory device featuring a parallel interface. This non-volatile memory is organized as 128M x 16 bits and is housed in a 63-VFBGA (10.5x13mm) surface-mount package. Operating within a voltage range of 1.7V to 1.95V, this component is suitable for applications requiring high-density data storage and fast read/write operations. Its robust NAND Flash technology makes it a reliable choice for various industrial and commercial applications, including consumer electronics, storage devices, and embedded systems where efficient data management is critical. The device is supplied in tape and reel packaging for automated assembly processes.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case63-VFBGA
Mounting TypeSurface Mount
Memory Size2Gbit
Memory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply1.7V ~ 1.95V
TechnologyFLASH - NAND
Memory FormatFLASH
Supplier Device Package63-VFBGA (10.5x13)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Memory Organization128M x 16
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
NAND08GW3D2AN6E

IC FLASH 8GBIT PARALLEL 48TSOP

product image
EDF8164A3PF-JD-F-R TR

IC DRAM 8GBIT PARALLEL 933MHZ

product image
MT49H16M18CSJ-25 IT:B

IC DRAM 288MBIT PARALLEL 144FBGA