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MT29F2G16ABBEAH4:E TR

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MT29F2G16ABBEAH4:E TR

IC FLASH 2GBIT PARALLEL 63VFBGA

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. MT29F2G16ABBEAH4-E-TR is a 2 Gigabit (Gbit) NAND Flash memory device featuring a parallel interface. This non-volatile memory component is organized as 128M x 16 and is housed in a compact 63-VFBGA (9x11) surface-mount package. Designed for a supply voltage range of 1.7V to 1.95V, it operates within an ambient temperature range of 0°C to 70°C. The MT29F2G16ABBEAH4-E-TR is commonly utilized in applications such as consumer electronics, industrial automation, and automotive systems requiring high-density, reliable data storage. The component is supplied in a Tape & Reel (TR) package.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case63-VFBGA
Mounting TypeSurface Mount
Memory Size2Gbit
Memory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply1.7V ~ 1.95V
TechnologyFLASH - NAND
Memory FormatFLASH
Supplier Device Package63-VFBGA (9x11)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Memory Organization128M x 16
ProgrammableNot Verified

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