MT29F2G16ABBEAH4-AAT:E
IC FLASH 2GBIT PARALLEL 63VFBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT29F2G16ABBEAH4-AAT-E is a 2Gbit NAND Flash memory device featuring a parallel interface. This non-volatile memory is organized as 128M x 16 and is housed in a 63-VFBGA (9x11) package for surface mounting. Operating within a voltage range of 1.7V to 1.95V, it supports an industrial temperature range of -40°C to 105°C (TA). The device is AEC-Q100 qualified, indicating its suitability for demanding automotive applications. This component is commonly utilized in automotive infotainment, advanced driver-assistance systems (ADAS), and industrial control systems where reliable, high-density non-volatile storage is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 63-VFBGA (9x11) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 128M x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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