Micron Technology Inc. MT29F2G16ABAGAWP-AATES-G is a 2Gbit parallel NOR Flash memory device. This component offers a high-density, high-performance solution for data storage applications. It features a 2Gbit (256M x 8 or 128M x 16) organization and operates with a 3.0V to 3.6V supply voltage. The device supports parallel interface for efficient data transfer. Packaged in a 48-TSOP I, it is designed for robust integration into embedded systems. This memory component finds application in automotive, industrial, and consumer electronics where reliable non-volatile storage is critical.
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Series:RoHS Status:Manufacturer Lead Time:Product Status: ActivePackaging: Tray